2N2222A

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tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
75 V
Collector- Emitter Voltage VCEO Max
50 V
Collector-Emitter Saturation Voltage
300 mV
Configuration
Single
Continuous Collector Current
800 mA
DC Collector/Base Gain hfe Min
75 at 1 mA, 10 VDC
DC Current Gain hFE Max
325 at 1 mA, 10 VDC
Emitter- Base Voltage VEBO
6 V
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
TO-18-3
Packaging
Bulk
Pd - Power Dissipation
500 mW
Product Type
BJTs - Bipolar Transistors
Technology
SI
Transistor Polarity
NPN

Uusimmat arvostelut

Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!

Shipping a little 1 weeks, normal packing, the procedure is complete.

The goods are OK, thank you dealers.

goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

Parcel received shook cool all 10 pieces is not checked check unsubscribe

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