Osa numero 2N2222AUB Luokat Bipolar Transistors - BJT RoHS Datalehdet 2N2222AUB Kuvaus Bipolar Transistors - BJT NPN G.P. TRANSISTOR
Luokat Bipolar Transistors - BJT Collector- Base Voltage VCBO 75 V Collector- Emitter Voltage VCEO Max 50 V Collector-Emitter Saturation Voltage 1 V Configuration Single DC Collector/Base Gain hfe Min 50 DC Current Gain hFE Max 325 Emitter- Base Voltage VEBO 6 V Height 1.37 mm Length 3.18 mm Maximum DC Collector Current 0.8 A Maximum Operating Temperature + 200 C Minimum Operating Temperature - 65 C Mounting Style SMD/SMT Packaging Bulk Pd - Power Dissipation 500 mW Product Type BJTs - Bipolar Transistors Technology SI Transistor Polarity NPN Width 2.67 mm