2N1486

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tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
100 V
Collector- Emitter Voltage VCEO Max
55 V
Collector-Emitter Saturation Voltage
750 mV
Configuration
Single
DC Collector/Base Gain hfe Min
35
DC Current Gain hFE Max
100
Emitter- Base Voltage VEBO
12 V
Maximum DC Collector Current
3 A
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
TO-8-3
Packaging
Tray
Pd - Power Dissipation
1.75 W
Product Type
BJTs - Bipolar Transistors
Technology
SI
Transistor Polarity
NPN

Uusimmat arvostelut

Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!

Shipping a little 1 weeks, normal packing, the procedure is complete.

The goods are OK, thank you dealers.

goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

Parcel received shook cool all 10 pieces is not checked check unsubscribe

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