2N1480

Kuvat ovat vain viitteellisiä

tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
100 V
Collector- Emitter Voltage VCEO Max
55 V
Collector-Emitter Saturation Voltage
1.4 V
Configuration
Single
Continuous Collector Current
1.5 A
DC Collector/Base Gain hfe Min
20 at 200 mA, 4 V
DC Current Gain hFE Max
60 at 200 mA, 4 V
Emitter- Base Voltage VEBO
6 V
Gain Bandwidth Product fT
1.5 MHz
Maximum DC Collector Current
-
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
TO-39-3
Packaging
Bulk
Part # Aliases
Pd - Power Dissipation
5 W
Product Type
BJTs - Bipolar Transistors
Series
2N1480
Technology
SI
Transistor Polarity
NPN

Uusimmat arvostelut

Takes 8 days to Japan. Good!

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

The goods are OK, thank you dealers.

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

Aiheeseen liittyvät avainsanat 2N14

  • 2N1480 Integroitu
  • 2N1480 RoHS
  • 2N1480 PDF-tietosivu
  • 2N1480 Datalehdet
  • 2N1480 Osa
  • 2N1480 Ostaa
  • 2N1480 Jakelija
  • 2N1480 PDF
  • 2N1480 Component
  • 2N1480 ICS
  • 2N1480 Lataa PDF
  • 2N1480 Lataa tiedot
  • 2N1480 Toimittaa
  • 2N1480 toimittaja
  • 2N1480 Hinta
  • 2N1480 Tietolomake
  • 2N1480 Kuva
  • 2N1480 Kuva
  • 2N1480 inventaario
  • 2N1480 kalusto
  • 2N1480 Alkuperäinen
  • 2N1480 halvin
  • 2N1480 Erinomainen
  • 2N1480 Lyijytön
  • 2N1480 määrittely
  • 2N1480 Kuumat tarjoukset
  • 2N1480 Break Hinta
  • 2N1480 Tekniset tiedot