Osa numero 2N1480 Luokat Bipolar Transistors - BJT RoHS Datalehdet 2N1480 Kuvaus Bipolar Transistors - BJT NPN SS Power
Luokat Bipolar Transistors - BJT Collector- Base Voltage VCBO 100 V Collector- Emitter Voltage VCEO Max 55 V Collector-Emitter Saturation Voltage 1.4 V Configuration Single Continuous Collector Current 1.5 A DC Collector/Base Gain hfe Min 20 at 200 mA, 4 V DC Current Gain hFE Max 60 at 200 mA, 4 V Emitter- Base Voltage VEBO 6 V Gain Bandwidth Product fT 1.5 MHz Maximum DC Collector Current - Maximum Operating Temperature + 200 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-39-3 Packaging Bulk Part # Aliases Pd - Power Dissipation 5 W Product Type BJTs - Bipolar Transistors Series 2N1480 Technology SI Transistor Polarity NPN