2N2222Ae3

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tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
75 V
Collector- Emitter Voltage VCEO Max
50 V
Collector-Emitter Saturation Voltage
1 V
Configuration
Single
Continuous Collector Current
800 mA
DC Collector/Base Gain hfe Min
30
Emitter- Base Voltage VEBO
6 V
Gain Bandwidth Product fT
100 MHz
Maximum DC Collector Current
800 mA
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
TO-18-3
Packaging
Bulk
Pd - Power Dissipation
500 mW
Product Type
BJTs - Bipolar Transistors
Technology
SI
Transistor Polarity
NPN

Uusimmat arvostelut

Hello! Order received, very happy. Thank you very much!

packed pretty good, all is ok,-seller.

Works. Find the price of this product is very good

Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!

Long Service and Russia!

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