Osa numero BF 888 H6327 Luokat RF Bipolar Transistors RoHS Datalehdet BF 888 H6327 Kuvaus RF Bipolar Transistors RF BIP TRANSISTOR
Luokat RF Bipolar Transistors Collector- Emitter Voltage VCEO Max 4 V Configuration Single Continuous Collector Current 30 mA DC Collector/Base Gain hfe Min 250 Emitter- Base Voltage VEBO 13 V Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case SOT-343 Packaging Reel Packaging Cut Tape Packaging MouseReel Part # Aliases Pd - Power Dissipation 160 mW Product Type RF Bipolar Transistors Series BF888 Technology SI Transistor Polarity NPN Transistor Type Bipolar Power Type RF Bipolar Power