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D2008UK

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tekniset tiedot

Luokat
RF MOSFET Transistors
Configuration
Single
Gain
13 dB
Height
4.95 mm
Id - Continuous Drain Current
2 A
Length
9.4 mm
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Operating Frequency
400 MHz
Output Power
5 W
Package / Case
TO-39-3
Pd - Power Dissipation
29 W
Product Type
RF MOSFET Transistors
Technology
SI
Transistor Polarity
N-Channel
Type
RF Power MOSFET
Vds - Drain-Source Breakdown Voltage
65 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V to 7 V
Width
9.4 mm

Porduct-luokka

Circuit Protection Circuit Protection 157,625 Tuotteet Connectors Connectors 2,137,436 Tuotteet Electromechanical Electromechanical 285,583 Tuotteet Embedded Solutions Embedded Solutions 103,645 Tuotteet Enclosures Enclosures 21,131 Tuotteet Engineering Development Tools Engineering Development Tools 46,355 Tuotteet Industrial Automation Industrial Automation 55,700 Tuotteet LED Lighting LED Lighting 67,469 Tuotteet Optoelectronics Optoelectronics 76,118 Tuotteet Passive Components Passive Components 2,029,037 Tuotteet Power Power 278,174 Tuotteet Semiconductors Semiconductors 575,056 Tuotteet Sensors Sensors 61,386 Tuotteet Test & Measurement Test & Measurement 20,391 Tuotteet

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