Osa numero TK14E65W,S1X Luokat MOSFET RoHS Datalehdet TK14E65W,S1X Kuvaus MOSFET MOSFET NChannel 0.22ohm DTMOS
Luokat MOSFET Channel Mode Enhancement Configuration Single Height 15.1 mm Id - Continuous Drain Current 13.7 A Length 10.16 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220-3 Pd - Power Dissipation 130 W Product Type MOSFET Qg - Gate Charge 35 nC Rds On - Drain-Source Resistance 220 mOhms Series TK14E65W Technology SI Tradename DTMOSIV Transistor Polarity N-Channel Transistor Type 1 N-Channel Unit Weight Vds - Drain-Source Breakdown Voltage 650 V Vgs - Gate-Source Voltage 30 V Vgs th - Gate-Source Threshold Voltage 3.5 V Width 4.45 mm