Osa numero TK12E60W,S1VX Luokat MOSFET RoHS Datalehdet TK12E60W,S1VX Kuvaus MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC
Luokat MOSFET Channel Mode Enhancement Configuration Single Fall Time 5.5 ns Height 15.1 mm Id - Continuous Drain Current 11.5 A Length 10.16 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220-3 Pd - Power Dissipation 110 W Product Type MOSFET Qg - Gate Charge 25 nC Rds On - Drain-Source Resistance 300 mOhms Rise Time 23 ns Series TK12E60W Technology SI Tradename DTMOSIV Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 85 ns Typical Turn-On Delay Time 23 ns Unit Weight Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 30 V Vgs th - Gate-Source Threshold Voltage 3.7 V Width 4.45 mm