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TK22A10N1,S4X

TK22A10N1,S4X
Kuvat ovat vain viitteellisiä
Osa numero
TK22A10N1,S4X
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET MOSFET NCh12.2ohm 10V 10uA VDS100V
Hanki hinta nyt! PCB-lainaus Hanki hinta nyt!

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Height
15 mm
Id - Continuous Drain Current
22 A
Length
10 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Pd - Power Dissipation
30 W
Product Type
MOSFET
Qg - Gate Charge
28 nC
Rds On - Drain-Source Resistance
11.5 mOhms
Series
TK22A10N1
Technology
SI
Tradename
U-MOSVIII-H
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Unit Weight
Vds - Drain-Source Breakdown Voltage
100 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
4 V
Width
4.5 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Very good!
all exactly and work. радиолюбителя useful set to, thank you)
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Perfectly.
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Lisää

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Aiheeseen liittyvät avainsanat TK22

  • TK22A10N1,S4X Integroitu
  • TK22A10N1,S4X RoHS
  • TK22A10N1,S4X PDF-tietosivu
  • TK22A10N1,S4X Datalehdet
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  • TK22A10N1,S4X PDF
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  • TK22A10N1,S4X Hinta
  • TK22A10N1,S4X Tietolomake
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  • TK22A10N1,S4X inventaario
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  • TK22A10N1,S4X Tekniset tiedot

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