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TK12A60W,S4VX

TK12A60W,S4VX
Kuvat ovat vain viitteellisiä
Osa numero
TK12A60W,S4VX
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET N-Ch 600V 11.5A 35W DTMOSIV 890pF 25nC
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
5.5 ns
Height
15 mm
Id - Continuous Drain Current
11.5 A
Length
10 mm
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Pd - Power Dissipation
35 W
Product Type
MOSFET
Qg - Gate Charge
25 nC
Rds On - Drain-Source Resistance
300 mOhms
Rise Time
23 ns
Series
TK12A60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
85 ns
Typical Turn-On Delay Time
45 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
2.7 V
Width
4.5 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
all exactly and work. радиолюбителя useful set to, thank you)
Thank You all fine, packed very well
Works. Find the price of this product is very good
Goods came in two weeks. Well packed. Track number tracked
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
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Suositut haut

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