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TK11P65W,RQ

TK11P65W,RQ
Kuvat ovat vain viitteellisiä
Osa numero
TK11P65W,RQ
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET Power MOSFET N-Channel
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
5.5 ns
Height
2.3 mm
Id - Continuous Drain Current
11.1 A
Length
6.5 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-252-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
100 W
Product Type
MOSFET
Qg - Gate Charge
25 nC
Rds On - Drain-Source Resistance
350 mOhms
Rise Time
23 ns
Series
TK11P65W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Typical Turn-Off Delay Time
85 ns
Typical Turn-On Delay Time
45 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Width
5.5 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Everything is excellent! recommend this seller!
Fast shippng. Good quality. I recomend this seller.
The goods are OK, thank you dealers.
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Received very good
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Aiheeseen liittyvät avainsanat TK11

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Suositut haut

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