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RU1J002YNTCL

RU1J002YNTCL
Kuvat ovat vain viitteellisiä
Osa numero
RU1J002YNTCL
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET 0.9V Drive Nch MOSFET
Hanki hinta nyt! PCB-lainaus Hanki hinta nyt!

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
43 ns
Forward Transconductance - Min
200 ms
Id - Continuous Drain Current
200 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-323FL-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
150 mW
Product Type
MOSFET
Rds On - Drain-Source Resistance
2.2 Ohms
Rise Time
8 ns
Series
RU1J002YN
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
17 ns
Typical Turn-On Delay Time
5 ns
Vds - Drain-Source Breakdown Voltage
50 V
Vgs - Gate-Source Voltage
4.5 V
Vgs th - Gate-Source Threshold Voltage
300 mV

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Uusimmat arvostelut

Kirjoita oma Reivew
all exactly and work. радиолюбителя useful set to, thank you)
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
The goods are OK, thank you dealers.
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Received very good
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RU1J002YNTCL
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RU1J002YNTCL
RU1J002YNTCL
Suosikki Bomille

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