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RU1C002ZPTCL

RU1C002ZPTCL
Kuvat ovat vain viitteellisiä
Osa numero
RU1C002ZPTCL
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET 4V Drive Pch MOSFET Drive Pch
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
17 ns
Height
0.9 mm
Id - Continuous Drain Current
200 mA
Length
2 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-323FL-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
150 mW
Product
MOSFET
Product Type
MOSFET
Qg - Gate Charge
1.4 nC
Rds On - Drain-Source Resistance
1.2 Ohms
Rise Time
4 ns
Series
RU1C002ZP
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel MOSFET
Type
Power MOSFET
Typical Turn-Off Delay Time
17 ns
Typical Turn-On Delay Time
6 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
4.5 V
Vgs th - Gate-Source Threshold Voltage
300 mV
Width
1.25 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Decent quality, not минвелл certainly, but enough decent
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
The timer is running. 10 PCS. Packed properly.
Looks good
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Aiheeseen liittyvät avainsanat RU1C

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  • RU1C002ZPTCL PDF-tietosivu
  • RU1C002ZPTCL Datalehdet
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