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TN2106K1-G

TN2106K1-G
Kuvat ovat vain viitteellisiä
Osa numero
TN2106K1-G
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET 60V 2.5Ohm
Hanki hinta nyt! PCB-lainaus Hanki hinta nyt!

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
5 ns
Forward Transconductance - Min
150 ms
Height
0.95 mm
Id - Continuous Drain Current
280 mA
Length
2.9 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-23-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
360 mW
Product
MOSFET Small Signal
Product Type
MOSFET
Rds On - Drain-Source Resistance
2.5 Ohms
Rise Time
5 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
FET
Typical Turn-Off Delay Time
6 ns
Typical Turn-On Delay Time
3 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
600 mV
Width
1.3 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
everything as it is written in the description of the same deductible prodovtsu deserved
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
packed pretty good, all is ok,-seller.
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
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Aiheeseen liittyvät avainsanat TN21

  • TN2106K1-G Integroitu
  • TN2106K1-G RoHS
  • TN2106K1-G PDF-tietosivu
  • TN2106K1-G Datalehdet
  • TN2106K1-G Osa
  • TN2106K1-G Ostaa
  • TN2106K1-G Jakelija
  • TN2106K1-G PDF
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  • TN2106K1-G Lataa PDF
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