SQ4425EY-T1_GE3

Kuvat ovat vain viitteellisiä
Osa numero
SQ4425EY-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET P-Channel 30V AEC-Q101 Qualified

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
13 ns
Height
1.75 mm
Id - Continuous Drain Current
18 A
Length
4.9 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SO-8
Packaging
Cut Tape
Packaging
Reel
Pd - Power Dissipation
6.8 W
Product Type
MOSFET
Qg - Gate Charge
50 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
9 mOhms
Rise Time
9 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
54 ns
Typical Turn-On Delay Time
12 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Width
3.9 mm

Uusimmat arvostelut

Received, Fast shipping, not checked yet

Quick delivery. Secure packing. Excellent product. Thank you

Everything is excellent! recommend this seller!

goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!

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