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SQ4284EY-T1_GE3

SQ4284EY-T1_GE3
Kuvat ovat vain viitteellisiä
Osa numero
SQ4284EY-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET 40V 8A 3.9W AEC-Q101 Qualified
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
11 ns, 11 ns
Forward Transconductance - Min
30 S, 30 S
Id - Continuous Drain Current
8 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SO-8
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Pd - Power Dissipation
3.9 W
Product Type
MOSFET
Qg - Gate Charge
45 nC, 45 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
11.2 mOhms
Rise Time
40 ns, 40 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
2 N-Channel
Typical Turn-Off Delay Time
32 ns, 32 ns
Typical Turn-On Delay Time
10 ns, 10 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
40 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.5 V

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
High Quality driver, works excellent. It came to Moscow for 7 days.
Goods came in two weeks. Well packed. Track number tracked
The goods are OK, thank you dealers.
I received the product right, thank you very much 2018/12/03 ★★★★★
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Aiheeseen liittyvät avainsanat SQ42

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