- Osa numero
- IKFW50N60DH3EXKSA1
- Luokat
- IGBT Transistors
- RoHS
- Datalehdet
- Kuvaus
- IGBT Transistors HOME APPLIANCES 14
IKFW50N60DH3EXKSA1
Kuvat ovat vain viitteellisiä
tekniset tiedot
- Luokat
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 2.2 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 40 A
- Continuous Collector Current Ic Max
- 60 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 30 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- PG-TO247-3
- Packaging
- Tube
- Part # Aliases
- Pd - Power Dissipation
- 130 W
- Product Type
- IGBT Transistors
- Technology
- SI
Porduct-luokka
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Uusimmat arvostelut
Hello! Order received, very happy. Thank you very much!
Flavia
Everything is excellent! recommend this seller!
Stoyan Chaykov
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
Fast shippng. Good quality. I recomend this seller.
Raymond de Vries
Works. Recommend
Rajiv
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Ihmiset katsovat IKFW50N60DH3EXKSA1 sitten ostivat
IKFW50N60DH3EXKSA1 Uutiset
03/14/2023
03/13/2023
03/13/2023
Aiheeseen liittyvät avainsanat IKFW
- IKFW50N60DH3EXKSA1 Integroitu
- IKFW50N60DH3EXKSA1 RoHS
- IKFW50N60DH3EXKSA1 PDF-tietosivu
- IKFW50N60DH3EXKSA1 Datalehdet
- IKFW50N60DH3EXKSA1 Osa
- IKFW50N60DH3EXKSA1 Ostaa
- IKFW50N60DH3EXKSA1 Jakelija
- IKFW50N60DH3EXKSA1 PDF
- IKFW50N60DH3EXKSA1 Component
- IKFW50N60DH3EXKSA1 ICS
- IKFW50N60DH3EXKSA1 Lataa PDF
- IKFW50N60DH3EXKSA1 Lataa tiedot
- IKFW50N60DH3EXKSA1 Toimittaa
- IKFW50N60DH3EXKSA1 toimittaja
- IKFW50N60DH3EXKSA1 Hinta
- IKFW50N60DH3EXKSA1 Tietolomake
- IKFW50N60DH3EXKSA1 Kuva
- IKFW50N60DH3EXKSA1 Kuva
- IKFW50N60DH3EXKSA1 inventaario
- IKFW50N60DH3EXKSA1 kalusto
- IKFW50N60DH3EXKSA1 Alkuperäinen
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- IKFW50N60DH3EXKSA1 Tekniset tiedot
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