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TN0110N3-G

TN0110N3-G
Kuvat ovat vain viitteellisiä
Osa numero
TN0110N3-G
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET 100V 3Ohm
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
3 ns
Forward Transconductance - Min
225 ms
Height
5.33 mm
Id - Continuous Drain Current
350 mA
Length
5.21 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-92-3
Packaging
Bulk
Pd - Power Dissipation
1 W
Product Type
MOSFET
Rds On - Drain-Source Resistance
3 Ohms
Rise Time
3 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
FET
Typical Turn-Off Delay Time
6 ns
Typical Turn-On Delay Time
2 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
100 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
600 mV
Width
4.19 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
all exactly and work. радиолюбителя useful set to, thank you)
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Works. Find the price of this product is very good
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
the photo in comparison with cheap. Delivery fast
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