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IGOT60R070D1AUMA1

IGOT60R070D1AUMA1
Kuvat ovat vain viitteellisiä
Osa numero
IGOT60R070D1AUMA1
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET 600V CoolGaN Power Transistor
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Fall Time
13 ns
Id - Continuous Drain Current
31 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
PG-DSO-20
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
125 W
Product
CoolGaN
Product Type
MOSFET
Qg - Gate Charge
5.8 nC
Rds On - Drain-Source Resistance
70 mOhms
Rise Time
9 ns
Technology
GaN
Tradename
CoolGaN
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
15 ns
Typical Turn-On Delay Time
15 ns
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
0.9 V

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Hello! Order received, very happy. Thank you very much!
Decent quality, not минвелл certainly, but enough decent
Parcel received shook cool all 10 pieces is not checked check unsubscribe
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