Osa numero U430 Luokat JFET RoHS Datalehdet U430 Kuvaus JFET JFET N-Channel -25V 30mA 500mW -150 Igss
Luokat JFET Configuration Dual Drain-Source Current at Vgs=0 30 mA Forward Transconductance - Min 10 ms Gate-Source Cutoff Voltage - 4 V Id - Continuous Drain Current 1 nA Mounting Style Through Hole Package / Case TO-78-8 Packaging Bulk Pd - Power Dissipation 500 mW (1/2 W) Series U430 Technology SI Transistor Polarity N-Channel Type JFET Vds - Drain-Source Breakdown Voltage 10 V Vgs - Gate-Source Breakdown Voltage - 25 V