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SQ3585EV-T1_GE3

SQ3585EV-T1_GE3
Kuvat ovat vain viitteellisiä
Osa numero
SQ3585EV-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified
Hanki hinta nyt! PCB-lainaus Hanki hinta nyt!

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
8 ns, 14 ns
Forward Transconductance - Min
10 S, 3 S
Id - Continuous Drain Current
3.57 A, 2.5 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
TSOP-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
1.67 W
Product Type
MOSFET
Qg - Gate Charge
2.5 nC, 3.5 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
49 mOhms, 140 mOhms
Rise Time
15 ns, 16 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel, P-Channel
Transistor Type
1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time
22 ns, 29 ns
Typical Turn-On Delay Time
9 ns, 7 ns
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
600 mV, 1.5 V

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
fast delivery, item as described, thanks!!
Received, Fast shipping, not checked yet
Quickly came to CET, all in one package. Look at the rules
Takes 8 days to Japan. Good!
Perfectly.
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Saatat pitää myös

SQ3585EV-T1_GE3
SQ3585EV-T1_GE3
Suosikki Bomille

Ihmiset katsovat SQ3585EV-T1_GE3 sitten ostivat

SQ3585EV-T1_GE3
SQ3585EV-T1_GE3
Suosikki Bomille

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Aiheeseen liittyvät avainsanat SQ35

  • SQ3585EV-T1_GE3 Integroitu
  • SQ3585EV-T1_GE3 RoHS
  • SQ3585EV-T1_GE3 PDF-tietosivu
  • SQ3585EV-T1_GE3 Datalehdet
  • SQ3585EV-T1_GE3 Osa
  • SQ3585EV-T1_GE3 Ostaa
  • SQ3585EV-T1_GE3 Jakelija
  • SQ3585EV-T1_GE3 PDF
  • SQ3585EV-T1_GE3 Component
  • SQ3585EV-T1_GE3 ICS
  • SQ3585EV-T1_GE3 Lataa PDF
  • SQ3585EV-T1_GE3 Lataa tiedot
  • SQ3585EV-T1_GE3 Toimittaa
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  • SQ3585EV-T1_GE3 Hinta
  • SQ3585EV-T1_GE3 Tietolomake
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  • SQ3585EV-T1_GE3 Tekniset tiedot

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