- Osa numero
- D2016UK
- Luokat
- RF MOSFET Transistors
- RoHS
- Datalehdet
- Kuvaus
- RF MOSFET Transistors RF MOSFET
D2016UK
Kuvat ovat vain viitteellisiä
tekniset tiedot
- Luokat
- RF MOSFET Transistors
- Configuration
- Dual
- Gain
- 10 dB
- Id - Continuous Drain Current
- 6 A
- Maximum Operating Temperature
- + 150 C
- Mounting Style
- SMD/SMT
- Operating Frequency
- 1 GHz
- Output Power
- 30 W
- Package / Case
- DK
- Pd - Power Dissipation
- 117 W
- Product Type
- RF MOSFET Transistors
- Technology
- SI
- Transistor Polarity
- N-Channel
- Type
- RF Power MOSFET
- Vds - Drain-Source Breakdown Voltage
- 65 V
- Vgs - Gate-Source Voltage
- 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V to 7 V
Porduct-luokka
Circuit Protection
157,625 Tuotteet
Connectors
2,137,436 Tuotteet
Electromechanical
285,583 Tuotteet
Embedded Solutions
103,645 Tuotteet
Enclosures
21,131 Tuotteet
Engineering Development Tools
46,355 Tuotteet
Industrial Automation
55,700 Tuotteet
LED Lighting
67,469 Tuotteet
Optoelectronics
76,118 Tuotteet
Passive Components
2,029,037 Tuotteet
Power
278,174 Tuotteet
Semiconductors
575,056 Tuotteet
Sensors
61,386 Tuotteet
Test & Measurement
20,391 Tuotteet
Uusimmat arvostelut
Very good!
Manuel MAde
fast delivery, item as described, thanks!!
Sandra Scheck
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Boris Arshinov
Thank You all fine, packed very well
Ulrich Bundke
Works. Find the price of this product is very good
Maxim Krasnov
D2016UK Uutiset
03/14/2023
03/13/2023
03/13/2023
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