Osa numero 2N2060L/TR Luokat Bipolar Transistors - BJT RoHS Datalehdet 2N2060L/TR Kuvaus Bipolar Transistors - BJT
Luokat Bipolar Transistors - BJT Collector- Base Voltage VCBO 100 V Collector- Emitter Voltage VCEO Max 60 V Collector-Emitter Saturation Voltage 0.3 V Configuration Dual DC Collector/Base Gain hfe Min 25 at 10 uA, 5 V DC Current Gain hFE Max 150 at 10 mA, 5 V Emitter- Base Voltage VEBO 7 V Maximum DC Collector Current 500 mA Maximum Operating Temperature + 200 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-78-6 Packaging Reel Pd - Power Dissipation 2.12 W Product Type BJTs - Bipolar Transistors Technology SI Transistor Polarity NPN