Osa numero GB100XCP12-227 Luokat IGBT Modules RoHS Datalehdet GB100XCP12-227 Kuvaus IGBT Modules 1200V 100A SIC IGBT CoPak
Luokat IGBT Modules Collector- Emitter Voltage VCEO Max 1200 V Collector-Emitter Saturation Voltage 1.9 V Configuration IGBT-Inverter Gate-Emitter Leakage Current 400 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Package / Case SOT-227 Packaging Bulk Product IGBT Silicon Carbide Modules Product Type IGBT Modules Series GB100XCP12 Technology SiC Unit Weight