GB100XCP12-227

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tekniset tiedot

Luokat
IGBT Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.9 V
Configuration
IGBT-Inverter
Gate-Emitter Leakage Current
400 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
SOT-227
Packaging
Bulk
Product
IGBT Silicon Carbide Modules
Product Type
IGBT Modules
Series
GB100XCP12
Technology
SiC
Unit Weight

Uusimmat arvostelut

Thanks for your feedback!

Everything is excellent! recommend this seller!

Great product. Arrived ahead of time. Thank you

Excellent transaction five star service thank you, we will do business again.

to seller thank you! all like the photo. not tried operation. seller store recommend.

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