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tekniset tiedot

Luokat
RF MOSFET Transistors
Configuration
Single
Gain
13 dB
Height
2.18 mm
Id - Continuous Drain Current
2 A
Length
5.08 mm
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Operating Frequency
1 GHz
Output Power
5 W
Package / Case
SO-8
Pd - Power Dissipation
30 W
Product Type
RF MOSFET Transistors
Technology
SI
Transistor Polarity
N-Channel
Type
RF Power MOSFET
Vds - Drain-Source Breakdown Voltage
65 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V to 5 V
Width
4.06 mm

Uusimmat arvostelut

goods very well received very good quality

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Decent quality, not минвелл certainly, but enough decent

Goods came in two weeks. Well packed. Track number tracked

Shipping a little 1 weeks, normal packing, the procedure is complete.

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