FF1200R17KE3

tekniset tiedot

Luokat
IGBT Modules
Collector- Emitter Voltage VCEO Max
1700 V
Collector-Emitter Saturation Voltage
2 V
Configuration
Dual
Continuous Collector Current at 25 C
1600 A
Gate-Emitter Leakage Current
400 nA
Height
38 mm
Length
140 mm
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
IHM130-10
Packaging
Tray
Part # Aliases
Pd - Power Dissipation
5.95 kW
Product Type
IGBT Modules
Width
130 mm

Uusimmat arvostelut

Very good!

My package arrived wet, not know where occurs this fact, but working all right

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Works. Recommend

Everything is fine!

Aiheeseen liittyvät avainsanat FF12

  • FF1200R17KE3 Integroitu
  • FF1200R17KE3 RoHS
  • FF1200R17KE3 PDF-tietosivu
  • FF1200R17KE3 Datalehdet
  • FF1200R17KE3 Osa
  • FF1200R17KE3 Ostaa
  • FF1200R17KE3 Jakelija
  • FF1200R17KE3 PDF
  • FF1200R17KE3 Component
  • FF1200R17KE3 ICS
  • FF1200R17KE3 Lataa PDF
  • FF1200R17KE3 Lataa tiedot
  • FF1200R17KE3 Toimittaa
  • FF1200R17KE3 toimittaja
  • FF1200R17KE3 Hinta
  • FF1200R17KE3 Tietolomake
  • FF1200R17KE3 Kuva
  • FF1200R17KE3 Kuva
  • FF1200R17KE3 inventaario
  • FF1200R17KE3 kalusto
  • FF1200R17KE3 Alkuperäinen
  • FF1200R17KE3 halvin
  • FF1200R17KE3 Erinomainen
  • FF1200R17KE3 Lyijytön
  • FF1200R17KE3 määrittely
  • FF1200R17KE3 Kuumat tarjoukset
  • FF1200R17KE3 Break Hinta
  • FF1200R17KE3 Tekniset tiedot