Osa numero 2N2905A/TR Luokat Bipolar Transistors - BJT RoHS Datalehdet 2N2905A/TR Kuvaus Bipolar Transistors - BJT
Luokat Bipolar Transistors - BJT Collector- Base Voltage VCBO 60 V Collector- Emitter Voltage VCEO Max 60 V Collector-Emitter Saturation Voltage 0.4 V Configuration Single DC Collector/Base Gain hfe Min 50 at 500 mA, 10 V DC Current Gain hFE Max 450 at 1 mA, 10 V Emitter- Base Voltage VEBO 5 V Maximum DC Collector Current 600 mA Maximum Operating Temperature + 200 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-205AD-3 Packaging Reel Pd - Power Dissipation 3 W Product Type BJTs - Bipolar Transistors Technology SI Transistor Polarity PNP