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IGD06N60TATMA1

IGD06N60TATMA1
Kuvat ovat vain viitteellisiä
Osa numero
IGD06N60TATMA1
Luokat
IGBT Transistors
RoHS
Datalehdet
Kuvaus
IGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed
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tekniset tiedot

Luokat
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Single
Continuous Collector Current at 25 C
12 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
88 W
Product Type
IGBT Transistors
Series
TRENCHSTOP IGBT
Technology
SI
Tradename
TRENCHSTOP
Unit Weight

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Teşekkürler
Takes 8 days to Japan. Good!
Yes, they are all here. :)
Everything is excellent! recommend this seller!
Works. Find the price of this product is very good
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Suositut haut

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