2N2906

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tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Emitter Voltage VCEO Max
40 V
Configuration
Single
DC Collector/Base Gain hfe Min
40 at 150 mA, 10 V
DC Current Gain hFE Max
40 at 150 mA, 10 V
Gain Bandwidth Product fT
200 MHz
Height
5.33 mm
Length
5.84 mm
Maximum DC Collector Current
0.6 A
Mounting Style
Through Hole
Package / Case
TO-18
Pd - Power Dissipation
400 mW
Product Type
BJTs - Bipolar Transistors
Technology
SI
Transistor Polarity
PNP
Width
5.84 mm

Uusimmat arvostelut

Takes 8 days to Japan. Good!

Hello! Order received, very happy. Thank you very much!

Works. Find the price of this product is very good

Goods came in two weeks. Well packed. Track number tracked

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

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