Osa numero 2N2906 Luokat Bipolar Transistors - BJT RoHS Datalehdet 2N2906 Kuvaus Bipolar Transistors - BJT BIPOLAR SMALL SIGNAL
Luokat Bipolar Transistors - BJT Collector- Emitter Voltage VCEO Max 40 V Configuration Single DC Collector/Base Gain hfe Min 40 at 150 mA, 10 V DC Current Gain hFE Max 40 at 150 mA, 10 V Gain Bandwidth Product fT 200 MHz Height 5.33 mm Length 5.84 mm Maximum DC Collector Current 0.6 A Mounting Style Through Hole Package / Case TO-18 Pd - Power Dissipation 400 mW Product Type BJTs - Bipolar Transistors Technology SI Transistor Polarity PNP Width 5.84 mm