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2N2906AUB/TR

2N2906AUB/TR
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tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
60 V
Collector- Emitter Voltage VCEO Max
60 V
Collector-Emitter Saturation Voltage
0.4 V
Configuration
Single
DC Collector/Base Gain hfe Min
40 at 100 uA, 10 V
DC Current Gain hFE Max
175 at 1 mA, 10 V
Emitter- Base Voltage VEBO
5 V
Maximum DC Collector Current
600 mA
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
LCC-3
Packaging
Cut Tape
Packaging
Reel
Pd - Power Dissipation
0.5 W
Product Type
BJTs - Bipolar Transistors
Technology
SI
Transistor Polarity
PNP

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
packed pretty good, all is ok,-seller.
Perfectly.
Shipping bіlshe mіsyatsya. Chi pratsyuyut not perevіryav.
I received the product right, thank you very much 2018/12/03 ★★★★★
all is well. checked work. seller recommend.
Lisää

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