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2N2369AUA/TR

2N2369AUA/TR
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tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
40 V
Collector- Emitter Voltage VCEO Max
15 V
Collector-Emitter Saturation Voltage
0.45 V
Configuration
Single
Continuous Collector Current
-
DC Collector/Base Gain hfe Min
40
DC Current Gain hFE Max
120
Emitter- Base Voltage VEBO
4.5 V
Gain Bandwidth Product fT
-
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
TO-18-3
Packaging
Cut Tape
Packaging
Reel
Pd - Power Dissipation
0.36 W
Product Type
BJTs - Bipolar Transistors
Technology
SI
Transistor Polarity
NPN

Porduct-luokka

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Works. Find the price of this product is very good
The goods are OK, thank you dealers.
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
and whole all right. the features no more функционалу check.
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