Osa numero 2N2369AU/TR Luokat Bipolar Transistors - BJT RoHS Datalehdet 2N2369AU/TR Kuvaus Bipolar Transistors - BJT BJTs
Luokat Bipolar Transistors - BJT Collector- Base Voltage VCBO 40 V Collector- Emitter Voltage VCEO Max 15 V Collector-Emitter Saturation Voltage 0.2 V Configuration Single DC Collector/Base Gain hfe Min 20 at 100 mA, 1 V DC Current Gain hFE Max 120 at 100 mA, 1 V Emitter- Base Voltage VEBO 4.5 V Maximum DC Collector Current 0.1 A Maximum Operating Temperature + 200 C Minimum Operating Temperature - 65 C Mounting Style SMD/SMT Package / Case LCC-6 Packaging Reel Packaging Cut Tape Pd - Power Dissipation 0.36 W Product Type BJTs - Bipolar Transistors Technology SI Transistor Polarity NPN