Osa numero 2N2895 Luokat Bipolar Transistors - BJT RoHS Datalehdet 2N2895 Kuvaus Bipolar Transistors - BJT BJTs
Luokat Bipolar Transistors - BJT Collector- Base Voltage VCBO 120 V Collector- Emitter Voltage VCEO Max 65 V Collector-Emitter Saturation Voltage 0.6 V Configuration Single Continuous Collector Current 1 A DC Collector/Base Gain hfe Min 40 DC Current Gain hFE Max 120 Maximum Operating Temperature + 200 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-18-3 Packaging Bulk Pd - Power Dissipation 1.8 W Product Type BJTs - Bipolar Transistors Technology SI Transistor Polarity NPN