Osa numero 2N2906A Luokat Bipolar Transistors - BJT RoHS Datalehdet 2N2906A Kuvaus Bipolar Transistors - BJT PNP Gen Pur SS
Luokat Bipolar Transistors - BJT Collector- Base Voltage VCBO 60 V Collector- Emitter Voltage VCEO Max 60 V Collector-Emitter Saturation Voltage 2.6 V Configuration Single DC Collector/Base Gain hfe Min 40 at 150 mA, 10 V Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 200 MHz Maximum DC Collector Current 600 mA Maximum Operating Temperature + 200 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-18 Packaging Bulk Part # Aliases Pd - Power Dissipation 4000 mW Product Type BJTs - Bipolar Transistors Series 2N2906 Technology SI Transistor Polarity PNP Unit Weight