2N2906A

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tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
60 V
Collector- Emitter Voltage VCEO Max
60 V
Collector-Emitter Saturation Voltage
2.6 V
Configuration
Single
DC Collector/Base Gain hfe Min
40 at 150 mA, 10 V
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
200 MHz
Maximum DC Collector Current
600 mA
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
TO-18
Packaging
Bulk
Part # Aliases
Pd - Power Dissipation
4000 mW
Product Type
BJTs - Bipolar Transistors
Series
2N2906
Technology
SI
Transistor Polarity
PNP
Unit Weight

Uusimmat arvostelut

Received, Fast shipping, not checked yet

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

High Quality driver, works excellent. It came to Moscow for 7 days.

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

The goods are OK, thank you dealers.

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