Osa numero D44H8 Luokat Bipolar Transistors - BJT RoHS Datalehdet D44H8 Kuvaus Bipolar Transistors - BJT Gen Low Voltage PWR 60V Vceo 10A Ic
Luokat Bipolar Transistors - BJT Collector- Base Voltage VCBO 60 V Collector- Emitter Voltage VCEO Max 60 V Collector-Emitter Saturation Voltage 1 V Configuration Single Continuous Collector Current 10 A DC Collector/Base Gain hfe Min 60 DC Current Gain hFE Max 60 Emitter- Base Voltage VEBO 5 V Height 9.15 mm Length 10.4 mm Maximum DC Collector Current 10 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-220-3 Pd - Power Dissipation 50 W Product Type BJTs - Bipolar Transistors Series D44H8 Technology SI Transistor Polarity NPN Unit Weight Width 4.6 mm