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DNBT8105-7

DNBT8105-7
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tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
80 V
Collector- Emitter Voltage VCEO Max
60 V
Collector-Emitter Saturation Voltage
500 mV
Configuration
Single
DC Collector/Base Gain hfe Min
30 at 2 A, 5 V
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
150 MHz
Height
1 mm
Length
2.9 mm
Maximum DC Collector Current
2 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SOT-23-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
300 mW
Product Type
BJTs - Bipolar Transistors
Series
DNBT8
Technology
SI
Transistor Polarity
NPN
Unit Weight
Width
1.3 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Teşekkürler
Quickly came to CET, all in one package. Look at the rules
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Everything is fine!
Great product. Arrived ahead of time. Thank you
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DNBT8105-7
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DNBT8105-7
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