- Osa numero
- 2N2905
- Luokat
- Bipolar Transistors - BJT
- RoHS
- Datalehdet
- Kuvaus
- Bipolar Transistors - BJT PNP 60Vcbo 40Vceo 5.0Vebo 0.6A 0.8W
2N2905
Kuvat ovat vain viitteellisiä
tekniset tiedot
- Luokat
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO
- 60 V
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector-Emitter Saturation Voltage
- 1.6 V
- Configuration
- Single
- Continuous Collector Current
- 0.6 A
- DC Collector/Base Gain hfe Min
- 35 at 100 uA, 10 V
- Emitter- Base Voltage VEBO
- 5 V
- Gain Bandwidth Product fT
- 200 MHz
- Maximum Operating Temperature
- + 200 C
- Minimum Operating Temperature
- - 65 C
- Mounting Style
- Through Hole
- Package / Case
- TO-39-3
- Packaging
- Bulk
- Part # Aliases
- Pd - Power Dissipation
- 800 mW
- Product Type
- BJTs - Bipolar Transistors
- Technology
- SI
- Transistor Polarity
- PNP
- Unit Weight
Porduct-luokka
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20,391 Tuotteet
Uusimmat arvostelut
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Kai Hallaren
Takes 8 days to Japan. Good!
Alex Fragkos
Yes, they are all here. :)
sudheer kumar sirra
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
2N2905 Uutiset
03/14/2023
03/13/2023
03/13/2023
Aiheeseen liittyvät avainsanat 2N29
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- 2N2905 Component
- 2N2905 ICS
- 2N2905 Lataa PDF
- 2N2905 Lataa tiedot
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- 2N2905 Kuva
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