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2N2369A

2N2369A
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tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
40 V
Collector- Emitter Voltage VCEO Max
15 V
Collector-Emitter Saturation Voltage
500 mV
Configuration
Single
DC Collector/Base Gain hfe Min
20 at 100 mA, 1 V
DC Current Gain hFE Max
120
Emitter- Base Voltage VEBO
4.5 V
Gain Bandwidth Product fT
500 MHz
Height
5.33 mm
Length
5.84 mm
Maximum DC Collector Current
200 mA
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
TO-18
Packaging
Bulk
Part # Aliases
Pd - Power Dissipation
360 mW
Product Type
BJTs - Bipolar Transistors
Series
2N2369
Technology
SI
Transistor Polarity
NPN
Width
5.84 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Takes 8 days to Japan. Good!
Yes, they are all here. :)
Decent quality, not минвелл certainly, but enough decent
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
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Aiheeseen liittyvät avainsanat 2N23

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