Osa numero NZT660 Luokat Bipolar Transistors - BJT RoHS Datalehdet NZT660 Kuvaus Bipolar Transistors - BJT PNP Transistor Low Saturation
Luokat Bipolar Transistors - BJT Collector- Base Voltage VCBO 80 V Collector- Emitter Voltage VCEO Max 60 V Collector-Emitter Saturation Voltage 550 mV Configuration Single Continuous Collector Current 3 A DC Current Gain hFE Max 300 Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 75 MHz Height 1.6 mm Length 6.5 mm Maximum DC Collector Current 3 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case SOT-223-4 Packaging Reel Packaging Cut Tape Packaging MouseReel Part # Aliases Pd - Power Dissipation 2 W Product Type BJTs - Bipolar Transistors Series NZT660 Technology SI Transistor Polarity PNP Unit Weight Width 3.56 mm