Osa numero TK12P60W,RVQ Luokat MOSFET RoHS Datalehdet TK12P60W,RVQ Kuvaus MOSFET DTMOSIV 600V 340mOhm 115A 100W 890pF 25nC
Luokat MOSFET Configuration Single Fall Time 5.5 ns Height 2.3 mm Id - Continuous Drain Current 11.5 A Length 6.5 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-252-3 Packaging Reel Pd - Power Dissipation 100 W Product Type MOSFET Qg - Gate Charge 25 nC Rds On - Drain-Source Resistance 340 mOhms Rise Time 23 ns Series TK12P60W Technology SI Tradename DTMOSIV Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 85 ns Typical Turn-On Delay Time 45 ns Unit Weight Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 30 V Vgs th - Gate-Source Threshold Voltage 3.7 V Width 5.5 mm