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DN2625DK6-G

DN2625DK6-G
Kuvat ovat vain viitteellisiä
Osa numero
DN2625DK6-G
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET N-CHANNEL DEPLETION MODE
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Depletion
Configuration
Dual
Fall Time
20 ns
Id - Continuous Drain Current
1.1 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Moisture Sensitive
Yes
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
DFN-8
Packaging
Tray
Product
MOSFET Small Signal
Product Type
MOSFET
Qg - Gate Charge
7.04 nC
Rds On - Drain-Source Resistance
3.5 Ohms
Rise Time
20 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
2 N-Channel
Typical Turn-Off Delay Time
10 ns
Typical Turn-On Delay Time
10 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
250 V
Vgs - Gate-Source Voltage
20 V

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Teşekkürler
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Perfectly.
Shipping a little 1 weeks, normal packing, the procedure is complete.
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
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Aiheeseen liittyvät avainsanat DN26

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  • DN2625DK6-G PDF-tietosivu
  • DN2625DK6-G Datalehdet
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  • DN2625DK6-G Jakelija
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