Osa numero TK12Q60W,S1VQ Luokat MOSFET RoHS Datalehdet TK12Q60W,S1VQ Kuvaus MOSFET DTMOSIV 600V 340mOhm 11.5A 100W 890pF
Luokat MOSFET Configuration Single Fall Time 5.5 ns Height 6.1 mm Id - Continuous Drain Current 11.5 A Length 6.65 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-251-3 Packaging Reel Pd - Power Dissipation 100 W Product Type MOSFET Qg - Gate Charge 25 nC Rds On - Drain-Source Resistance 265 mOhms Rise Time 23 ns Series TK12Q60W Technology SI Tradename DTMOSIV Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 85 ns Typical Turn-On Delay Time 45 ns Unit Weight Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 30 V Vgs th - Gate-Source Threshold Voltage 3.7 V Width 2.3 mm