TK17N65W,S1F

Kuvat ovat vain viitteellisiä
Osa numero
TK17N65W,S1F
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET Power MOSFET N-Channel

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
6 ns
Height
20.95 mm
Id - Continuous Drain Current
17.3 A
Length
15.94 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-3
Packaging
Tube
Pd - Power Dissipation
165 W
Product Type
MOSFET
Qg - Gate Charge
45 nC
Rds On - Drain-Source Resistance
170 mOhms
Rise Time
15 ns
Series
TK17N65W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
50 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Width
5.02 mm

Uusimmat arvostelut

all exactly and work. радиолюбителя useful set to, thank you)

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

High Quality driver, works excellent. It came to Moscow for 7 days.

Fast shippng. Good quality. I recomend this seller.

The timer is running. 10 PCS. Packed properly.

Aiheeseen liittyvät avainsanat TK17

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  • TK17N65W,S1F PDF-tietosivu
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  • TK17N65W,S1F Tekniset tiedot