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F20W60C3-7100

F20W60C3-7100
Kuvat ovat vain viitteellisiä
Osa numero
F20W60C3-7100
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET Hi Switching Speed High Voltage
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tekniset tiedot

Luokat
MOSFET
Fall Time
60 ns
Forward Transconductance - Min
8.7 S
Id - Continuous Drain Current
20 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Package / Case
MTO-3P-3
Packaging
Tube
Pd - Power Dissipation
75 W
Product Type
MOSFET
Qg - Gate Charge
87 nC
Rds On - Drain-Source Resistance
190 mOhms
Rise Time
60 ns
Technology
SI
Transistor Polarity
N-Channel
Typical Turn-Off Delay Time
355 ns
Typical Turn-On Delay Time
32 ns
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
My package arrived wet, not know where occurs this fact, but working all right
Hello! Order received, very happy. Thank you very much!
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
Seems well have not tested
I received the product right, thank you very much 2018/12/03 ★★★★★
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Saatat pitää myös

F20W60C3-7100
F20W60C3-7100
Suosikki Bomille

Ihmiset katsovat F20W60C3-7100 sitten ostivat

F20W60C3-7100
F20W60C3-7100
Suosikki Bomille

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Aiheeseen liittyvät avainsanat F20W

  • F20W60C3-7100 Integroitu
  • F20W60C3-7100 RoHS
  • F20W60C3-7100 PDF-tietosivu
  • F20W60C3-7100 Datalehdet
  • F20W60C3-7100 Osa
  • F20W60C3-7100 Ostaa
  • F20W60C3-7100 Jakelija
  • F20W60C3-7100 PDF
  • F20W60C3-7100 Component
  • F20W60C3-7100 ICS
  • F20W60C3-7100 Lataa PDF
  • F20W60C3-7100 Lataa tiedot
  • F20W60C3-7100 Toimittaa
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