TK20E60W,S1VX

Kuvat ovat vain viitteellisiä
Osa numero
TK20E60W,S1VX
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
6 ns
Height
15.1 mm
Id - Continuous Drain Current
20 A
Length
10.16 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Pd - Power Dissipation
165 W
Product Type
MOSFET
Qg - Gate Charge
48 nC
Rds On - Drain-Source Resistance
130 mOhms
Rise Time
25 ns
Series
TK20E60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
50 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V
Width
4.45 mm

Uusimmat arvostelut

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Yes, they are all here. :)

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

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