Osa numero TK14G65W,RQ Luokat MOSFET RoHS Datalehdet TK14G65W,RQ Kuvaus MOSFET Power MOSFET N-Channel
Luokat MOSFET Channel Mode Enhancement Configuration Single Fall Time 7 ns Height 10.4 mm Id - Continuous Drain Current 13.7 A Length 10 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-262-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 130 W Product Type MOSFET Qg - Gate Charge 35 nC Rds On - Drain-Source Resistance 220 mOhms Rise Time 20 ns Series TK14G65W Technology SI Tradename DTMOSIV Transistor Polarity N-Channel Typical Turn-Off Delay Time 110 ns Typical Turn-On Delay Time 60 ns Unit Weight Vds - Drain-Source Breakdown Voltage 650 V Vgs - Gate-Source Voltage 30 V Vgs th - Gate-Source Threshold Voltage 2.5 V Width 4.5 mm