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TK20N60W,S1VF

TK20N60W,S1VF
Kuvat ovat vain viitteellisiä
Osa numero
TK20N60W,S1VF
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
6 ns
Height
20.95 mm
Id - Continuous Drain Current
20 A
Length
15.94 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-3
Pd - Power Dissipation
165 W
Product Type
MOSFET
Qg - Gate Charge
48 nC
Rds On - Drain-Source Resistance
130 mOhms
Rise Time
25 ns
Series
TK20N60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
50 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V
Width
5.02 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Perfectly.
High Quality driver, works excellent. It came to Moscow for 7 days.
fast delivery
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
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Aiheeseen liittyvät avainsanat TK20

  • TK20N60W,S1VF Integroitu
  • TK20N60W,S1VF RoHS
  • TK20N60W,S1VF PDF-tietosivu
  • TK20N60W,S1VF Datalehdet
  • TK20N60W,S1VF Osa
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  • TK20N60W,S1VF Lataa PDF
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  • TK20N60W,S1VF toimittaja
  • TK20N60W,S1VF Hinta
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  • TK20N60W,S1VF Tekniset tiedot

Suositut haut

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