ZVN2110ASTZ

Kuvat ovat vain viitteellisiä
Osa numero
ZVN2110ASTZ
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET N-Chnl 100V

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
8 ns
Height
4.01 mm
Id - Continuous Drain Current
320 mA
Length
4.77 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-92-3
Packaging
MouseReel
Packaging
Reel
Packaging
Cut Tape
Pd - Power Dissipation
700 mW
Product
MOSFET Small Signal
Product Type
MOSFET
Rds On - Drain-Source Resistance
4 Ohms
Rise Time
8 ns
Series
ZVN2110
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
FET
Typical Turn-Off Delay Time
13 ns
Typical Turn-On Delay Time
7 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
100 V
Vgs - Gate-Source Voltage
20 V
Width
2.41 mm

Uusimmat arvostelut

Отличный продавец . Рекомендую.+++

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Thank You all fine, packed very well

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

fast delivery

Aiheeseen liittyvät avainsanat ZVN2

  • ZVN2110ASTZ Integroitu
  • ZVN2110ASTZ RoHS
  • ZVN2110ASTZ PDF-tietosivu
  • ZVN2110ASTZ Datalehdet
  • ZVN2110ASTZ Osa
  • ZVN2110ASTZ Ostaa
  • ZVN2110ASTZ Jakelija
  • ZVN2110ASTZ PDF
  • ZVN2110ASTZ Component
  • ZVN2110ASTZ ICS
  • ZVN2110ASTZ Lataa PDF
  • ZVN2110ASTZ Lataa tiedot
  • ZVN2110ASTZ Toimittaa
  • ZVN2110ASTZ toimittaja
  • ZVN2110ASTZ Hinta
  • ZVN2110ASTZ Tietolomake
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  • ZVN2110ASTZ inventaario
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  • ZVN2110ASTZ Kuumat tarjoukset
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  • ZVN2110ASTZ Tekniset tiedot