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SQ4532AEY-T1_GE3

SQ4532AEY-T1_GE3
Kuvat ovat vain viitteellisiä
Osa numero
SQ4532AEY-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
19 ns, 16 ns
Forward Transconductance - Min
22 S, 5.5 S
Id - Continuous Drain Current
7.3 A, 5.3 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SO-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
3.3 W, 3.3 W
Product Type
MOSFET
Qg - Gate Charge
5.9 nC, 7.9 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
21 mOhms, 56 mOhms
Rise Time
17 ns, 17 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel, P-Channel
Transistor Type
1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time
10 ns, 19 ns
Typical Turn-On Delay Time
7 ns, 6 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.5 V, 2.5 V

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Received, Fast shipping, not checked yet
Quick delivery. Secure packing. Excellent product. Thank you
all exactly and work. радиолюбителя useful set to, thank you)
Quickly came to CET, all in one package. Look at the rules
it is safe and sound all, thank you seller!
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SQ4532AEY-T1_GE3
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SQ4532AEY-T1_GE3
SQ4532AEY-T1_GE3
Suosikki Bomille

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Aiheeseen liittyvät avainsanat SQ45

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  • SQ4532AEY-T1_GE3 PDF-tietosivu
  • SQ4532AEY-T1_GE3 Datalehdet
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  • SQ4532AEY-T1_GE3 Tekniset tiedot

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